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d a t a sh eet product speci?cation supersedes data of 1996 nov 26 file under integrated circuits, ic03 1997 apr 22 integrated circuits TEA1110A low voltage versatile telephone transmission circuit with dialler interface
1997 apr 22 2 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1110A features low dc line voltage; operates down to 1.6 v (excluding voltage drop over external polarity guard) voltage regulator with adjustable dc voltage provides a supply for external circuits symmetrical high impedance inputs (64 k w ) for dynamic, magnetic or piezo-electric microphones asymmetrical high impedance input (32 k w ) for electret microphones dtmf input with confidence tone mute input for pulse or dtmf dialling receiving amplifier for dynamic, magnetic or piezo-electric earpieces agc line loss compensation for microphone and earpiece amplifiers. application line powered telephone sets, cordless telephones, fax machines, answering machines. general description the TEA1110A is a bipolar integrated circuit that performs all speech and line interface functions required in fully electronic telephone sets. it performs electronic switching between speech and dialling. the ic operates at a line voltage down to 1.6 v dc (with reduced performance) to facilitate the use of telephone sets connected in parallel. all statements and values refer to all versions unless otherwise specified. quick reference data i line = 15 ma; v ee =0v; r slpe =20 w ; agc pin connected to v ee ; z line = 600 w ; f = 1 khz; t amb =25 c; unless otherwise speci?ed. ordering information symbol parameter conditions min. typ. max. unit i line line current operating range normal operation 11 - 140 ma with reduced performance 1 - 11 ma v ln dc line voltage 3.35 3.65 3.95 v i cc internal current consumption v cc = 2.9 v - 1.1 1.4 ma v cc supply voltage for peripherals i p =0ma - 2.9 - v g vtrx typical voltage gain microphone amplifier (not adjustable) v mic = 4 mv (rms) - 43.7 - db receiving amplifier range v ir = 4 mv (rms) 19 - 33 db d g vtrx gain control range for microphone and receiving ampli?ers with respect to i line =15ma i line =85ma - 5.9 - db d g vtrxm gain reduction for microphone and receiving ampli?ers mute = low - 80 - db type number package name description version TEA1110A dip14 plastic dual in-line package; 14 leads (300 mil) sot27-1 TEA1110At so14 plastic small outline package; 14 leads; body width 3.9 mm sot108-1
1997 apr 22 3 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1110A block diagram handbook, full pagewidth att. dtmf agc circuit current reference low voltage circuit ir mic + mic - v ee agc slpe TEA1110A(t) 3 2 8 11 9 10 13 12 6 14 1 5 7 gar qr mute ln v cc reg v i mgg736 v i v i v i fig.1 block diagram.
1997 apr 22 4 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1110A pinning symbol pin description ln 1 positive line terminal slpe 2 slope (dc resistance) adjustment reg 3 line voltage regulator decoupling n.c. 4 not connected dtmf 5 dual-tone multi-frequency input mute 6 mute input to select speech or dialling mode (active low) ir 7 receiving ampli?er input agc 8 automatic gain control/ line loss compensation mic - 9 inverting microphone ampli?er input mic+ 10 non-inverting microphone ampli?er input v ee 11 negative line terminal qr 12 receiving ampli?er output gar 13 receive gain adjustment v cc 14 supply voltage for speech circuit and peripherals fig.2 pin configuration. handbook, halfpage mgg735 TEA1110A(t) 1 2 3 4 5 6 7 8 14 13 12 11 10 9 ln slpe reg n.c. dtmf mute ir agc mic - mic + v ee qr gar v cc functional description all data given in this chapter are typical values, except when otherwise specified. supply (pins ln, slpe, v cc and reg) the supply for the TEA1110A and its peripherals is obtained from the telephone line. see fig.3. the ic generates a stabilized reference voltage (v ref ) between pins ln and slpe. v ref is temperature compensated and can be adjusted by means of an external resistor (r va ). v ref equals 3.35 v and can be increased by connecting r va between pins reg and slpe (see fig.4), or decreased by connecting r va between pins reg and ln. the voltage at pin reg is used by the internal regulator to generate v ref and is decoupled by c reg , which is connected to v ee . this capacitor, converted into an equivalent inductance (see section set impedance), realizes the set impedance conversion from its dc value (r slpe ) to its ac value (r cc in the audio-frequency range). the voltage at pin slpe is proportional to the line current. the voltage at pin ln is: where: i line = line current i cc = current consumption of the ic i p = supply current for peripheral circuits i* = current consumed between ln and v ee . the preferred value for r slpe is 20 w . changing r slpe will affect more than the dc characteristics; it also influences the microphone and dtmf gains, the gain control characteristics, the sidetone level and the maximum output swing on the line. v ln v ref r slpe i slpe + = i slpe i line i cc C i p C i * C =
1997 apr 22 5 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1110A fig.3 supply configuration. handbook, full pagewidth i slpe i sh reg 311 ln 114 from pre amp slpe 2 v ee v d v cc r cc c vcc i cc c reg r slpe v exch r exch i line r line TEA1110A i * i p peripheral circuits 100 m f 4.7 m f 20 w 619 w mgg737 the internal circuitry of the TEA1110A is supplied from pin v cc . this voltage supply is derived from the line voltage by means of a resistor (r cc ) and must be decoupled by a capacitor c vcc . it may also be used to supply peripheral circuits such as dialling or control circuits. the v cc voltage depends on the current consumed by the ic and the peripheral circuits as shown by the formula: (see also figs 5 and 6). r ccint is the internal equivalent resistance of the voltage supply, and i rec is the current consumed by the output stage of the earpiece amplifier. the dc line current flowing into the set is determined by the exchange supply voltage (v exch ), the feeding bridge resistance (r exch ), the dc resistance of the telephone line (r line ) and the reference voltage (v ref ). with line currents below 7.5 ma, the internal reference voltage (generating v ref ) is automatically adjusted to a lower value. this means that more sets can operate in parallel with dc line voltages (excluding the polarity guard) down to an absolute minimum voltage of 1.6 v. at currents below 7.5 ma, the circuit has limited sending and receiving levels. this is called the low voltage area. v cc v cc0 r ccint i p i rec C () C = v cc0 v ln r cc i cc C = fig.4 reference voltage adjustment by r va . (1) influence of r va on v ref . (2) v ref without influence of r va . handbook, halfpage 6.0 v ref (v) 3.0 4.0 (1) (2) 5.0 r va ( w ) mgd176 10 5 10 4 10 6 10 7
1997 apr 22 6 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1110A set impedance in the audio frequency range, the dynamic impedance is mainly determined by the r cc resistor. the equivalent impedance of the circuit is illustrated in fig.7. microphone ampli?er (pins mic+ and mic - ) the TEA1110A has symmetrical microphone inputs. the input impedance between pins mic+ and mic - is 64 k w (2 32 k w ). the voltage gain from pins mic+/mic - to pin ln is set at 43.7 db (typ). automatic gain control is provided on this amplifier for line loss compensation. receiving ampli?er (pins ir, gar and qr) the receiving amplifier has one input (ir) and one output (qr). the input impedance between pin ir and pin v ee is 20 k w . the voltage gain from pin ir to pin qr is set at 33 db (typ). the gain can be decreased by connecting an external resistor r gar between pins gar and qr; the adjustment range is 14 db. two external capacitors c gar (connected between gar and qr) and c gars (connected between gar and v ee ) ensure stability. the c gar capacitor provides a first-order low-pass filter. the cut-off frequency corresponds to the time constant c gar (r garint // r gar ). r garint is the internal resistor which sets the gain with a typical value of 125 k w . the condition c gars =10 c gar must be fulfilled to ensure stability. the output voltage of the receiving amplifier is specified for continuous wave drive. the maximum output swing depends on the dc line voltage, the r cc resistor, the i cc current consumption of the circuit, the i p current consumption of the peripheral circuits and the load impedance. automatic gain control is provided on this amplifier for line loss compensation. automatic gain control (pin agc) the TEA1110A performs automatic line loss compensation. the automatic gain control varies the gain of the microphone amplifier and the gain of the receiving amplifier in accordance with the dc line current. the control range is 5.9 db (which corresponds approximately to a line length of 5 km for a 0.5 mm diameter twisted-pair copper cable with a dc resistance of 176 w /km and an average attenuation of 1.2 db/km). the ic can be used with different configurations of feeding bridge (supply voltage and bridge resistance) by connecting an external resistor r agc between pins agc and v ee . this resistor enables the i start and i stop line currents to be increased (the ratio between i start and i stop is not affected by the resistor). the agc function is disabled when pin agc is left open-circuit. mute function (pin mute) the mute function performs the switching between the speech mode and the dialling mode. when mute is low, the dtmf input is enabled and the microphone and receiving amplifiers inputs are disabled. when mute is high, the microphone and receiving amplifiers inputs are enabled while the dtmf input is disabled. a pull-up resistor is included at the input. dtmf ampli?er (pin dtmf) when the dtmf amplifier is enabled, dialling tones may be sent on line. these tones can be heard in the earpiece at a low level (confidence tone). the TEA1110A has an asymmetrical dtmf input. the input impedance between dtmf and v ee is 20 k w . the voltage gain from pin dtmf to pin ln is 25.3 db. the automatic gain control has no effect on the dtmf amplifier. fig.5 typical current i p available from v cc for peripheral circuits at i line = 15 ma. (1) with r va resistor. (2) without r va resistor. handbook, halfpage 2.5 0 01 2 34 mbe783 0.5 1 1.5 2 v cc (v) (1) (2) i p (ma)
1997 apr 22 7 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1110A fig.6 v cc supply voltage for peripherals. handbook, halfpage peripheral circuit i p i rec r ccint v cc v ee v cco mbe792 fig.7 equivalent impedance between ln and v ee . l eq =c reg r slpe r p . r p = internal resistance. r p = 15.5 k w . handbook, halfpage ln v ee slpe r slpe c reg reg v cc r cc 4.7 m f 100 m f c vcc 619 w 20 w r p v ref l eq mbe788 sidetone suppression the TEA1110A anti-sidetone network comprising r cc //z line , r ast1 , r ast2 , r ast3 , r slpe and z bal (see fig.8 ) suppresses the transmitted signal in the earpiece. maximum compensation is obtained when the following conditions are fulfilled: the scale factor k is chosen to meet the compatibility with a standard capacitor from the e6 or e12 range for z bal . in practice, z line varies considerably with the line type and the line length. therefore, the value of z bal should be for an average line length which gives satisfactory sidetone suppression with short and long lines. the suppression also depends on the accuracy of the match between z bal and the impedance of the average line. the anti-sidetone network for the TEA1110A (as shown in fig.12) attenuates the receiving signal from the line by 32 db before it enters the receiving amplifier. the attenuation is almost constant over the whole audio frequency range. a wheatstone bridge configuration (see fig.9) may also be used. more information on the balancing of an anti-sidetone bridge can be obtained in our publication applications handbook for wired telecom systems, ic03b , order number 9397 750 00811. r slpe r ast1 r cc r ast2 r ast3 + () = k r ast2 r ast3 r slpe + () () r ast1 r slpe () ----------------------------------------------------------------------- = z bal kz line =
1997 apr 22 8 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1110A fig.8 equivalent circuit of TEA1110A family anti-sidetone bridge. handbook, full pagewidth mbe787 i m z ir ir r ast1 r ast3 r ast2 slpe r slpe v ee z line r cc ln z bal fig.9 equivalent circuit of an anti-sidetone network in a wheatstone bridge configuration. handbook, full pagewidth mbe786 i m z ir ir z bal r ast1 slpe r slpe v ee z line r cc ln r a
1997 apr 22 9 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1110A limiting values in accordance with the absolute maximum rating system (iec 134). handling this device meets class 2 esd test requirements [human body model (hbm)], in accordance with mil std 883c - method 3015 . thermal characteristics symbol parameter conditions min. max. unit v ln positive continuous line voltage v ee - 0.4 12 v repetitive line voltage during switch-on or line interruption v ee - 0.4 13.2 v v n(max) maximum voltage on all pins v ee - 0.4 v cc + 0.4 v i line line current r slpe =20 w ; see figs 10 and 11 - 140 ma p tot total power dissipation t amb =75 c; see figs 10 and 11 TEA1110A - 588 mw TEA1110At - 384 mw t stg storage temperature - 40 +125 c t amb operating ambient temperature - 25 +75 c symbol parameter value unit r th j-a thermal resistance from junction to ambient in free air; mounted on epoxy board 40.1 19.1 1.5 mm (TEA1110A) 85 k/w thermal resistance from junction to ambient in free air; mounted on epoxy board 40.1 19.1 1.5 mm (TEA1110At) 130 k/w
1997 apr 22 10 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1110A fig.10 so14 safe operating area (TEA1110At). handbook, halfpage 212 150 30 70 110 mbh275 46810 130 90 50 i line (ma) v ln v slpe (v) (3) (4) (2) (1) (1) t amb =45 c; p tot = 0.615 w. (2) t amb =55 c; p tot = 0.538 w. (3) t amb =65 c; p tot = 0.461 w. (4) t amb =75 c; p tot = 0.384 w. fig.11 dip14 safe operating area (TEA1110A). (1) t amb =35 c; p tot = 1.058 w. (2) t amb =45 c; p tot = 0.941 w. (3) t amb =55 c; p tot = 0.823 w. (4) t amb =65 c; p tot = 0.705 w. (5) t amb =75 c; p tot = 0.588 w. handbook, halfpage 212 150 30 70 110 mgd859 46810 130 90 50 i line (ma) v ln _ v slpe (v) (2) (3) (1) (4) (5)
1997 apr 22 11 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1110A characteristics i line = 15 ma; v ee =0v; r slpe =20 w ; agc pin connected to v ee ; z line = 600 w ; f = 1 khz; t amb =25 c; unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit supplies (pins v ln , v cc , slpe and reg) v ref stabilized voltage between ln and slpe 3.1 3.35 3.6 v v ln dc line voltage i line =1ma - 1.6 - v i line =4ma - 2.3 - v i line = 15 ma 3.35 3.65 3.95 v i line = 140 ma -- 6.9 v v ln(exr) dc line voltage with an external resistor r va r va(slpe - reg) =27k w- 4.4 - v d v ln(t) dc line voltage variation with temperature referred to 25 c t amb = - 25 to +75 c - 30 - mv i cc internal current consumption v cc = 2.9 v - 1.1 1.4 ma v cc supply voltage for peripherals i p =0ma - 2.9 - v r ccint equivalent supply voltage resistance i p = 0.5 ma - 550 620 w microphone ampli?er (pins mic+ and mic - ) ? z i ? input impedance differential between pins mic+ and mic - - 64 - k w single-ended between pins mic+/mic - and v ee - 32 - k w g vtx voltage gain from mic+/mic - to ln v mic = 4 mv (rms) 42.7 43.7 44.7 db d g vtx(f) gain variation with frequency referred to 1 khz f = 300 to 3400 hz - 0.2 - db d g vtx(t) gain variation with temperature referred to 25 c t amb = - 25 to +75 c - 0.3 - db cmrr common mode rejection ratio - 80 - db v ln(max)(rms) maximum sending signal (rms value) i line = 15 ma; thd = 2% 1.4 1.7 - v i line = 4 ma, thd = 10% - 0.8 - v v notx noise output voltage at pin ln; pins mic+/mic - shorted through 200 w psophometrically weighted (p53 curve) -- 78.5 - dbmp receiving ampli?er (pins ir, qr and gar) ? z i ? input impedance - 20 - k w g vrx voltage gain from ir to qr v ir = 4 mv (rms) 32 33 34 db d g vrx(f) gain variation with frequency referred to 1 khz f = 300 to 3400 hz - 0.2 - db d g vrx(t) gain variation with temperature referred to 25 c t amb = - 25 to +75 c - 0.3 - db
1997 apr 22 12 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1110A d g vrxr gain voltage reduction range external resistor connected between gar and qr -- 14 db v o(rms) maximum receiving signal (rms value) i p = 0 ma sine wave drive; r l = 150 w ; thd = 2% - 0.25 - v i p = 0 ma sine wave drive; r l = 450 w ; thd = 2% - 0.35 - v v norx(rms) noise output voltage at pin qr (rms value) g vrx = 33 db; ir open-circuit; r l = 150 w ; psophometrically weighted (p53 curve) -- 87 - dbvp automatic gain control (pin agc) d g vtrx gain control range for microphone and receiving ampli?ers with respect to i line =15ma i line =85ma - 5.9 - db i start highest line current for maximum gain - 23 - ma i stop lowest line current for minimum gain - 56 - ma dtmf ampli?er (pin dtmf) ? z i ? input impedance - 20 - k w g vdtmf voltage gain from dtmf to ln v dtmf = 20 mv (rms); mute = low 24.1 25.3 26.5 db d g vdtmf(f) gain variation with frequency referred to 1 khz f = 300 to 3400 hz - 0.2 - db d g vdtmf(t) gain variation with temperature referred to 25 c t amb = - 25 to +75 c - 0.4 - db g vct voltage gain from dtmf to qr (con?dence tone) v dtmf = 20 mv (rms); r l = 150 w -- 15 - db mute function (pin mute) v il low level input voltage v ee - 0.4 - v ee + 0.3 v v ih high level input voltage v ee + 1.5 - v cc + 0.4 v i mute input current 1.5 m a d g vtrxm gain reduction for microphone and receiving ampli?ers mute = low 80 db symbol parameter conditions min. typ. max. unit
1997 apr 22 13 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1110A application information a ndbook, full pagewidth telephone line 4 bas11 a/b b/a vdr 95 v bzx79c10 bzx79c10 r ast1 r protect 130 k w 390 w r ast2 r ast3 3.92 k w z bal c ir c gar c gars 10 w ir bf473 bsn254 bc547 bc558 bc547 pd input r pd4 470 k w r pd5 470 k w r pd3 1 m w r pd2 470 k w r pd6 68 k w qr gar mic + mic - signal from dial and control circuits c vcc supply for peripheral circuits r cc 619 w r slpe r limit 3.9 w c reg 20 w r pd1 470 k w v cc dtmf mute ln slpe reg agc v ee TEA1110A(t) 100 m f 1 nf 100 pf 4.7 m f mgg738 fig.12 typical application of the TEA1110A in sets with pulse dialling or flash facilities.
1997 apr 22 14 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1110A package outlines unit a max. a 1 a 2 a 3 b p cd (1) e (1) (1) eh e ll p qz y w v q references outline version european projection issue date iec jedec eiaj mm inches 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 8.75 8.55 4.0 3.8 1.27 6.2 5.8 0.7 0.6 0.7 0.3 8 0 o o 0.25 0.1 dimensions (inch dimensions are derived from the original mm dimensions) note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 1.0 0.4 sot108-1 x w m q a a 1 a 2 b p d h e l p q detail x e z e c l v m a (a ) 3 a 7 8 1 14 y 076e06s ms-012ab pin 1 index 0.069 0.0098 0.0039 0.057 0.049 0.01 0.019 0.014 0.0098 0.0075 0.35 0.34 0.16 0.15 0.050 1.05 0.041 0.24 0.23 0.028 0.024 0.028 0.012 0.01 0.25 0.01 0.004 0.039 0.016 91-08-13 95-01-23 0 2.5 5 mm scale so14: plastic small outline package; 14 leads; body width 3.9 mm sot108-1
1997 apr 22 15 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1110A unit a max. 1 2 (1) (1) b 1 cd (1) z ee m h l references outline version european projection issue date iec jedec eiaj mm inches dimensions (inch dimensions are derived from the original mm dimensions) sot27-1 92-11-17 95-03-11 a min. a max. b max. w m e e 1 1.73 1.13 0.53 0.38 0.36 0.23 19.50 18.55 6.48 6.20 3.60 3.05 0.254 2.54 7.62 8.25 7.80 10.0 8.3 2.2 4.2 0.51 3.2 0.068 0.044 0.021 0.015 0.77 0.73 0.014 0.009 0.26 0.24 0.14 0.12 0.01 0.10 0.30 0.32 0.31 0.39 0.33 0.087 0.17 0.020 0.13 050g04 mo-001aa m h c (e ) 1 m e a l seating plane a 1 w m b 1 e d a 2 z 14 1 8 7 b e pin 1 index 0 5 10 mm scale note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. dip14: plastic dual in-line package; 14 leads (300 mil) sot27-1
1997 apr 22 16 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1110A soldering introduction there is no soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. however, wave soldering is not always suitable for surface mounted ics, or for printed-circuits with high population densities. in these situations reflow soldering is often used. this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our ic package databook (order code 9398 652 90011). dip s oldering by dipping or by wave the maximum permissible temperature of the solder is 260 c; solder at this temperature must not be in contact with the joint for more than 5 seconds. the total contact time of successive solder waves must not exceed 5 seconds. the device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (t stg max ). if the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. r epairing soldered joints apply a low voltage soldering iron (less than 24 v) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. if the temperature of the soldering iron bit is less than 300 c it may remain in contact for up to 10 seconds. if the bit temperature is between 300 and 400 c, contact may be up to 5 seconds. so r eflow soldering reflow soldering techniques are suitable for all so packages. reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several techniques exist for reflowing; for example, thermal conduction by heated belt. dwell times vary between 50 and 300 seconds depending on heating method. typical reflow temperatures range from 215 to 250 c. preheating is necessary to dry the paste and evaporate the binding agent. preheating duration: 45 minutes at 45 c. w ave soldering wave soldering techniques can be used for all so packages if the following conditions are observed: a double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. the longitudinal axis of the package footprint must be parallel to the solder flow. the package footprint must incorporate solder thieves at the downstream end. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. maximum permissible solder temperature is 260 c, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 c within 6 seconds. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. r epairing soldered joints fix the component by first soldering two diagonally- opposite end leads. use only a low voltage soldering iron (less than 24 v) applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
1997 apr 22 17 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1110A definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
1997 apr 22 18 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1110A notes
1997 apr 22 19 philips semiconductors product speci?cation low voltage versatile telephone transmission circuit with dialler interface TEA1110A notes
internet: http://www.semiconductors.philips.com philips semiconductors C a worldwide company ? philips electronics n.v. 1997 sca54 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 82785, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. +63 2 816 6380, fax. +63 2 817 3474 poland: ul. lukiska 10, pl 04-123 warszawa, tel. +48 22 612 2831, fax. +48 22 612 2327 portugal: see spain romania: see italy russia: philips russia, ul. usatcheva 35a, 119048 moscow, tel. +7 095 755 6918, fax. +7 095 755 6919 singapore: lorong 1, toa payoh, singapore 1231, tel. +65 350 2538, fax. +65 251 6500 slovakia: see austria slovenia: see italy south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 7430 johannesburg 2000, tel. +27 11 470 5911, fax. +27 11 470 5494 south america: rua do rocio 220, 5th floor, suite 51, 04552-903 s?o paulo, s?o paulo - sp, brazil, tel. +55 11 821 2333, fax. +55 11 829 1849 spain: balmes 22, 08007 barcelona, tel. +34 3 301 6312, fax. +34 3 301 4107 sweden: kottbygatan 7, akalla, s-16485 stockholm, tel. +46 8 632 2000, fax. +46 8 632 2745 switzerland: allmendstrasse 140, ch-8027 zrich, tel. +41 1 488 2686, fax. +41 1 481 7730 taiwan: philips semiconductors, 6f, no. 96, chien kuo n. rd., sec. 1, taipei, taiwan tel. +886 2 2134 2865, fax. +886 2 2134 2874 thailand: philips electronics (thailand) ltd., 209/2 sanpavuth-bangna road prakanong, bangkok 10260, tel. +66 2 745 4090, fax. +66 2 398 0793 turkey: talatpasa cad. no. 5, 80640 gltepe/istanbul, tel. +90 212 279 2770, fax. +90 212 282 6707 ukraine : philips ukraine, 4 patrice lumumba str., building b, floor 7, 252042 kiev, tel. +380 44 264 2776, fax. +380 44 268 0461 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. +44 181 730 5000, fax. +44 181 754 8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. +1 800 234 7381 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v, 11000 beograd, tel. +381 11 625 344, fax.+381 11 635 777 for all other countries apply to: philips semiconductors, marketing & sales communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 34 waterloo road, north ryde, nsw 2113, tel. +61 2 9805 4455, fax. +61 2 9805 4466 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 1 60 101, fax. +43 1 60 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 200 733, fax. +375 172 200 773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 689 211, fax. +359 2 689 102 canada: philips semiconductors/components, tel. +1 800 234 7381 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: prags boulevard 80, pb 1919, dk-2300 copenhagen s, tel. +45 32 88 2636, fax. +45 31 57 0044 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 9 615800, fax. +358 9 61580920 france: 4 rue du port-aux-vins, bp317, 92156 suresnes cedex, tel. +33 1 40 99 6161, fax. +33 1 40 99 6427 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 23 53 60, fax. +49 40 23 536 300 greece: no. 15, 25th march street, gr 17778 tavros/athens, tel. +30 1 4894 339/239, fax. +30 1 4814 240 hungary: see austria india: philips india ltd, shivsagar estate, a block, dr. annie besant rd. worli, mumbai 400 018, tel. +91 22 4938 541, fax. +91 22 4938 722 indonesia: see singapore ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, po box 18053, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 649 1007 italy: philips semiconductors, piazza iv novembre 3, 20124 milano, tel. +39 2 6752 2531, fax. +39 2 6752 2557 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108, tel. +81 3 3740 5130, fax. +81 3 3740 5077 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381 middle east: see italy printed in the netherlands 417027/1200/02/pp20 date of release: 1997 apr 22 document order number: 9397 750 02077

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